Date: April 7, 2026
Time: 05:30 PM
Venue: Lecture Hall 1003, Block 7, IISER Berhampur
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“Devices and Device Physics: An Experimentalist’s Perspective”
We have introduced a combination of scanning tunneling spectroscopy (STS) and Kelvin probe force microscopy (KPFM) in deriving the semiconductors’ band edges with respect to the vacuum energy.
While the STS provides the energies with respect to the Fermi level of the semiconductor, the KPFM maps the surface potential or work function at the nanometer scale. We will show the method to derive energy levels of semiconductor thin films and, thereby, of heterojunction devices as fabricated in a lab. In this talk, we will present a flowchart of research on device physics with pathways to improve the efficiencies through a directed materials-engineering approach.
Prof. Amlan J. Pal - Prof. Pal is one of the leading scientists to have spearheaded the initiation of research on devices and device physics in the country. His work bridges the gap between basic research and optoelectronic applications and focuses on the fabrication and characterization of different devices, such as resistive switching, memory, synaptic devices for neuromorphic computing, organic electronics, photovoltaic solar cells, photodetectors, and light-emitting diodes based on organic semiconductors, halide perovskites, conjugated polymers, and inorganic quantum dots. Prof. Pal has mentored 32 PhD students in this fascinating field. He is a Fellow of all three science academies of India and of the Indian National Academy of Engineering as well.
